s594t / s594tr / s594trw document number 85048 rev. 1.6, 08-sep-08 vishay semiconductors www.vishay.com 1 19216 sot143 sot143r sot343r 1 2 4 3 2 1 3 4 electrostatic sensiti v ede v ice. o b ser v e preca u tions for handling. 1 2 4 3 not for new design, this pr oduct will be obsoleted soon mosmic ? for tv-tuner prestage with 5 v supply voltage comments mosmic - mos m onolithic i ntegrated c ircuit features ? integrated gate protection diodes ? low noise figure ? high gain ? biasing network on chip ? improved cross modulation at gain reduction ? high agc-range ? smd package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications low noise gain controlled input stages in uhf-and vhf- tuner with 5 v supply voltage. mechanical data typ: s594t case: sot-143 plastic case weight: approx. 8.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 typ: s594tr case: sot-143r plastic case weight: approx. 8.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 typ: s594trw case: sot-343r plastic case weight: approx. 6.0 mg pinning: 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 parts table g2 g1 rf in agc s d v dd (v ds ) c block rfc rf out 94 9296 c block c block part marking package s594t 594 sot-143 s594tr 94r sot-143r s594trw w94 sot-343r e3
www.vishay.com 2 document number 85048 rev. 1.6, 08-sep-08 s594t / s594tr / s594trw vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified caution for gate 1 switch-off mode: no external dc-voltage on gate 1 in active mode! switch-off at gate 1 with v g1s < 0.7 v is feasible. using open collector switching transis tor (inside of pll), insert 10 k collector resistor. electrical ac characteristics t amb = 25 c, unless otherwise specified v ds = 5 v, v g2s = 4 v, i d = i dsp , f = 1 mhz parameter test condition symbol value unit drain - source voltage v ds 8v drain current i d 20 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1/gate 2 - source voltage v g1/g2sm 6v total power dissipation t amb 60 c p tot 160 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w parameter test condition symbol min ty p. max unit gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 710v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 710v gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 50 a - v g1s = 5 v, v g2s = v ds = 0 - i g1ss 100 a gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain current v ds = 5 v, v g1s = 0, v g2s = 4 v i dss 50 500 a self-biased operating current v ds = 5 v, v g1s = nc, v g2s = 4 v i dsp 71014ma gate 2 - source cut-off voltage v ds = 5 v, v g1s = nc, i d = 20 av g2s(off) 1.0 v parameter test condition symbol min ty p. max unit forward transadmittance |y 21s |202428ms gate 1 input capacitance c issg1 2.1 2.5 pf feedback capacitance c rss 20 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 26 db g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 16.5 20 db
s594t / s594tr / s594trw document number 85048 rev. 1.6, 08-sep-08 vishay semiconductors www.vishay.com 3 common emitter s-parameters agc range v ds = 5 v, v g2s = 1 to 4 v, f = 800 mhz g ps 40 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f1db g s = 3.3 ms, g l = 1 ms, f = 800 mhz f1.3db parameter test condition symbol min ty p. max unit f/mhz s11 s21 s12 s22 log mag ang log mag ang log mag ang log mag ang deg deg deg deg 50 -0.02 -4.1 7.63 174.7 -63.74 88.0 -0.07 -1.8 100 -0.04 -7.9 7.56 169.0 -57.38 85.8 -0.09 -3.4 150 -0.11 -11.6 7.47 162.5 -53.95 82.9 -0.12 -5.3 200 -0.19 -15.5 7.36 156.7 -51.68 80.5 -0.15 -6.9 250 -0.30 -19.6 7.20 150.3 -50.05 78.0 -0.17 -8.8 300 -0.39 -22.9 7.06 145.2 -48.69 76.6 -0.22 -10.4 350 -0.54 -26.6 6.84 139.3 -47.82 74.8 -0.27 -11.8 400 -0.67 -30.0 6.67 133.9 -47.15 73.6 -0.29 -13.6 450 -0.82 -33.3 6.44 128.7 -46.66 72.8 -0.37 -15.1 500 -0.98 -36.7 6.26 123.5 -46.39 72.1 -0.44 -16.8 550 -1.14 -39.8 6.07 118.7 -46.33 72.0 -0.48 -18.3 600 -1.30 -43.2 5.81 113.4 -46.34 74.4 -0.55 -19.8 650 -1.44 -46.1 5.62 109.3 -46.14 76.3 -0.61 -21.1 700 -1.58 -49.2 5.43 104.4 -46.17 78.6 -0.66 -22.5 750 -1.74 -52.0 5.22 100.0 -46.48 81.7 -0.72 -24.2 800 -1.91 -54.9 5.01 95.5 -46.65 87.0 -0.78 -25.5 850 -2.02 -58.0 4.86 91.2 -46.62 93.4 -0.82 -27.0 900 -2.16 -61.0 4.68 86.8 -46.43 102.1 -0.86 -28.7 950 -2.28 -63.8 4.53 82.6 -45.77 110.0 -0.93 -30.0 1000 -2.43 -66.6 4.29 78.4 -45.10 114.9 -1.01 -31.4 1050 -2.57 -69.4 4.12 73.8 -44.59 119.4 -1.12 -32.7 1100 -2.74 -72.4 3.93 69.9 -44.05 126.3 -1.18 -34.2 1150 -2.81 -75.3 3.85 65.7 -43.14 132.1 -1.20 -35.8 1200 -2.93 -78.0 3.74 62.0 -42.24 138.1 -1.23 -37.3 1250 -3.06 -80.8 3.63 57.8 -41.21 143.1 -1.27 -38.7 1300 -3.16 -83.8 3.47 53.4 -40.03 146.5 -1.39 -40.1
www.vishay.com 4 document number 85048 rev. 1.6, 08-sep-08 s594t / s594tr / s594trw vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. total power dissipati on vs. ambient temperature figure 2. drain current vs. drain source voltage figure 3. drain current vs. gate 2 source voltage 0 25 50 75 100 0 50 100 150 200 250 p - total power dissipation ( mw ) tot t amb C ambient temperature ( c) 150 95 10765 125 v g2s =4v 01 23 0 4 8 12 16 20 i C drain current ( ma ) d v ds C drain source voltag e(v) 5 95 10766 4 2v 1v 3v 012 34 0 4 8 12 16 20 i C drain current ( ma ) d v g2s C gate 2 source voltag e(v) 95 10767 v ds =5v figure 4. forward transadmittanc e vs. gate 2 source voltage figure 5. gate 1 input capacitance vs. gate 2 source voltage figure 6. output capacitance vs. drain source voltage 0 10 20 30 40 95 10768 012 34 v g2s C gate 2 source voltag e(v) v ds =5v f = 200 mhz y - forward transadmittance ( ms ) 21s c C gate 1 input capacitance ( pf ) issg1 95 10769 0 1 2 3 4 01 2 3 4 v g2s C gate 2 source voltag e(v) 6 5 v ds =5v f = 200 mhz 34 56 0 0.5 1 1.5 2 c C output capacitance ( pf ) oss v ds C drain source voltag e(v) 7 9511143 v g2 s =4v f = 200 mhz
s594t / s594tr / s594trw document number 85048 rev. 1.6, 08-sep-08 vishay semiconductors www.vishay.com 5 figure 7. transducer gain vs. gate 2 source voltage figure 8. cross modulation vs. gate 2 source voltage 95 10770 -60 -40 -20 0 20 s - transducer gain ( db ) 2 012 34 v g2s C gate 2 source voltag e(v) 21 v ds =5v f = 800 mhz cm C cross modulation ( db ) 95 11144 0 20 40 60 80 234 5 6 v g2s C gate 2 source voltag e(v) v ds =5v f = 800 mhz p in = -20 dbm
www.vishay.com 6 document number 85048 rev. 1.6, 08-sep-08 s594t / s594tr / s594trw vishay semiconductors v ds = 10 v, i d = 10 ma, z 0 = 50 s 11 s 21 s 12 s 22 figure 9. input reflection coefficient figure 10. forward tr ansmission coefficient 12 940 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 ? 0.2 0.5 1 2 5 50 1300 mhz 300 800 12 942 0 90 180 C90 1.0 2.0 C150 C120 C60 C30 120 60 30 50 1300 mhz 300 550 800 1050 figure 11. reverse transmission coefficient figure 12. output reflection coefficient 12 941 0 90 180 C90 0.008 0.016 C150 C120 C60 C30 120 150 60 30 50 1300 mhz 300 1050 12 943 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 ? 0.2 0.5 1 2 5 50 1300 mhz 300 800
s594t / s594tr / s594trw document number 85048 rev. 1.6, 08-sep-08 vishay semiconductors www.vishay.com 7 package dimensions in mm package dimensions in mm 96 12239 96 12240 foot print recommendation: 0. 8 [0.031] 1.9 [0.075] 0. 8 [0.031] 1.7 [0.067] 1.2 [0.047] 0. 8 [0.031] 0.9 [0.035] 0.9 [0.035] 0.15 [0.006] 0.0 8 [0.003] 1.1 [0.043] 0.1 [0.004] max. 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1. 8 [0.071] 2 [0.079] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] 1.6 [0.063] 2. 8 [0.110] 3 [0.11 8 ] 2.35 [0.093] 2.6 [0.102] 0.35 [0.014] 0.5 [0.020] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 1. 8 [0.071] 2 [0.079]
www.vishay.com 8 document number 85048 rev. 1.6, 08-sep-08 s594t / s594tr / s594trw vishay semiconductors package dimensions in mm 96 1223 8
s594t / s594tr / s594trw document number 85048 rev. 1.6, 08-sep-08 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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